Beta
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DIODE GEN PURP 600V 6A R-6
| Part | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) [Max] | Technology | Current - Average Rectified (Io) | Supplier Device Package | Current - Reverse Leakage @ Vr | Speed | Mounting Type | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Package / Case | Reverse Recovery Time (trr) | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | 65 pF | 600 V | Standard | 6 A | R-6 | 10 µA | 200 mA 500 ns | Through Hole | 150 °C | -55 °C | R-6 Axial | 75 ns | 1.7 V |