UCC21717-Q1 Series

Automotive 10-A source/sink single-channel isolated gate driver for SiC/IGBT with active protection

Catalog

Automotive 10-A source/sink single-channel isolated gate driver for SiC/IGBT with active protection

Part	Pulse Width Distortion (Max) [Max]	Current - Peak Output	Grade	Mounting Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Supplier Device Package	Current - Output High, Low	Current - Output High, Low	Common Mode Transient Immunity (Min) [Min]	Propagation Delay tpLH / tpHL (Max) [Max]	Qualification	Voltage - Output Supply	Voltage - Isolation	Package / Case [x]	Package / Case	Package / Case [y]	Approval Agency	Technology	Number of Channels	Operating Temperature [Max]	Operating Temperature [Min]
Texas Instruments UCC21717QDWRQ1	30 ns	10 A	Automotive	Surface Mount	27 ns	33 ns	16-SOIC	4 A	-	150 kV/µs	130 ns	AEC-Q100	33 V	5700 Vrms	0.295 in	16-SOIC	7.5 mm	VDE	Capacitive Coupling	1	125 °C	-40 °C

Catalog

Automotive 10-A source/sink single-channel isolated gate driver for SiC/IGBT with active protection

Key Features

• 5.7kVRMS single channel isolated gate driverAEC-Q100 qualified for automotive applicationsDevice temperature grade 1: -40°C to +125°C ambient operating temperature rangeFunctional Safety Quality-ManagedDocumentation available to aid functional safety system designSiC MOSFETs and IGBTs up to 2121Vpk33V maximum output drive voltage (VDD-VEE)±10A drive strength and split output150V/ns minimum CMTI270ns response time fast overcurrent protection4A internal active Miller clamp400mA soft turn-off under fault conditionIsolated analog sensor with PWM output forTemperature sensing with NTC, PTC or thermal diodeHigh voltage DC-Link or phase voltageAlarm FLT on over current and reset from RST/ENDisabling the device with RST/EN triggers a soft turn offRejects <40ns noise transient and pulses on input pins12V VDD UVLO with power good on RDYInputs/outputs with over/under-shoot transient voltage immunity up to 5V130ns (maximum) propagation delay and 30ns (maximum) pulse/part skewSOIC-16 DW package with creepage and clearance distance > 8mmOperating junction temperature –40°C to 150°C5.7kVRMS single channel isolated gate driverAEC-Q100 qualified for automotive applicationsDevice temperature grade 1: -40°C to +125°C ambient operating temperature rangeFunctional Safety Quality-ManagedDocumentation available to aid functional safety system designSiC MOSFETs and IGBTs up to 2121Vpk33V maximum output drive voltage (VDD-VEE)±10A drive strength and split output150V/ns minimum CMTI270ns response time fast overcurrent protection4A internal active Miller clamp400mA soft turn-off under fault conditionIsolated analog sensor with PWM output forTemperature sensing with NTC, PTC or thermal diodeHigh voltage DC-Link or phase voltageAlarm FLT on over current and reset from RST/ENDisabling the device with RST/EN triggers a soft turn offRejects <40ns noise transient and pulses on input pins12V VDD UVLO with power good on RDYInputs/outputs with over/under-shoot transient voltage immunity up to 5V130ns (maximum) propagation delay and 30ns (maximum) pulse/part skewSOIC-16 DW package with creepage and clearance distance > 8mmOperating junction temperature –40°C to 150°C

Description

The UCC21717-Q1 is a galvanically isolated single channel gate driver designed to drive up to 1700V SiC MOSFETs and IGBTs. It features advanced integrated protection, best-in-class dynamic performance, and robustness. UCC21717-Q1 has up to ±10A peak source and sink current. The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5kVRMS working voltage, 12.8kVPK surge immunity with longer than 40 years Isolation barrier life, as well as providing low part-to-part skew, and >150V/ns common mode noise immunity (CMTI). The UCC21717-Q1 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active Miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size and cost. The UCC21717-Q1 is a galvanically isolated single channel gate driver designed to drive up to 1700V SiC MOSFETs and IGBTs. It features advanced integrated protection, best-in-class dynamic performance, and robustness. UCC21717-Q1 has up to ±10A peak source and sink current. The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5kVRMS working voltage, 12.8kVPK surge immunity with longer than 40 years Isolation barrier life, as well as providing low part-to-part skew, and >150V/ns common mode noise immunity (CMTI). The UCC21717-Q1 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active Miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size and cost.