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100V N-CHANNEL ENHANCEMENT MODE
| Part | Power Dissipation (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Technology | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Mounting Type | Package / Case | Package / Case [y] | Package / Case [x] | FET Type | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Panjit International Inc. | 2.5 W | -55 °C | 150 °C | 8-SOP | 7 A | 1519 pF | 20 V | MOSFET (Metal Oxide) | 31 nC | 4.5 V 10 V | 100 V | 2.5 V | Surface Mount | 8-SOIC | 3.9 mm | 0.154 in | N-Channel | 25 mOhm |