SCT3040KRHR Series

1200V, 55A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

Catalog

1200V, 55A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

Part	Contents	Type	Primary Attributes	Function	Secondary Attributes	Utilized IC / Part	Supplied Contents	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Operating Temperature	Drain to Source Voltage (Vdss)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Rds On (Max) @ Id, Vgs	Technology	Drive Voltage (Max Rds On, Min Rds On)	Grade	Qualification
Rohm Semiconductor P02SCT3040KR-EVK-001	Board(s)	Power Management	Overvoltage Protection	Half H-Bridge Driver (External FET)	On-Board LEDs	SCT3040KR	Board(s)
Rohm Semiconductor SCT3040KW7TL								107 nC	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	5.6 V	267 W	175 °C	1200 V	Surface Mount	56 A	N-Channel	1337 pF	TO-263-7	52 mOhm
Rohm Semiconductor SCT3040KRC15								107 nC	TO-247-4	5.6 V	262 W	175 °C	1200 V	Through Hole	55 A	N-Channel	1337 pF	TO-247-4L	52 mOhm	SiC (Silicon Carbide Junction Transistor)	18 V
Rohm Semiconductor SCT3040KRHRC15								107 nC	TO-247-4	5.6 V	262 W	175 °C	1200 V	Through Hole	55 A	N-Channel	1337 pF	TO-247-4L	52 mOhm	MOSFET (Metal Oxide)	18 V	Automotive	AEC-Q101
Rohm Semiconductor SCT3040KRC14								107 nC	TO-247-4	5.6 V	262 W	175 °C	1200 V	Through Hole	55 A	N-Channel	1337 pF	TO-247-4L	52 mOhm		18 V
Rohm Semiconductor SCT3040KLHRC11								107 nC	TO-247-3	5.6 V	262 W	175 °C	1200 V	Through Hole	55 A	N-Channel	1337 pF	TO-247N	52 mOhm		18 V	Automotive	AEC-Q101

Catalog

1200V, 55A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

Key Features

• Qualified to AEC-Q101, Low on-resistance, Fast switching speed, Fast reverse recovery, Easy to parallel, Simple to drive, Pb-free lead plating ; RoHS compliant

Description

SCT3040KR is anSiC MOSFETfeaturing a trench gate structure optimized for a number of applications, including server power supplies,solar power inverters, switch-mode power supplies, motor drives, induction heating, andEV charging stationsrequiring high efficiency. A new 4-pin package is used that separates the power and driver source terminals, making it possible to maximize high-speed switching performance. This improves turn ON loss in particular, and as a result the total turn ON and turn OFF losses can be reduced by as much as 35% compared with the conventional 3-pin package (TO-247N).A pioneer and industry leader in SiC technology, ROHM was the first supplier to mass produce trench-type MOSFETs that further improve efficiency while reducing power consumption over existing SiC MOSFETs.