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DIODE MODULE GP 600V 500A 3TOWER
| Part | Speed | Speed | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Diode Configuration | Voltage - Forward (Vf) (Max) @ If | Supplier Device Package | Voltage - DC Reverse (Vr) (Max) [Max] | Package / Case | Current - Average Rectified (Io) (per Diode) | Technology | Mounting Type | Current - Reverse Leakage @ Vr |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | Standard Recovery >500ns | 200 mA | 150 °C | -55 °C | 1 Pair Common Cathode | 1.2 V | Three Tower | 600 V | Three Tower | 500 A | Standard | Chassis Mount | 25 µA |