SILICON CARBIDE (SIC) MERGED PIN SCHOTTKY (MPS) DIODE 1200V 50A TO-247-2; MOUNTING STYLE: THROUGH HOLE; PACKAGE / CASE: TO-247-2; PACKAGING: TUBE; FACTORY PACK QUANTITY: 30; CONFIGURATION: SINGLE; REPETITIVE REVERSE VOLTAGEN(VRRM): 1200 V; FORWARD CURRENTN(IF): 50 A; FORWARD VOLTAGEN(VF): 1.5 V @ 50 A; REVERSE CURRENTN(IR): 4 UA @ 1200 V; TOTAL CAPACITIVE CHARGE (QC): 199 NC; CAPACITANCEN(C): 3263 PF @ 1 V; REVERSE RECOVERY TIMEN(TRR): < 10 NS; FORWARD SURGE CURRENTN(IFSM): 300 A; POWER DISSIPATIONN(PD): 1228 W; SWITCHING SPEEDN(TS): < 10 NS; MINIMUM OPERATING TEMPERATURE: - 55 °C; MAXIMUM OPERATING TEMPERATURE: 175 °C
| Part | Package / Case | Current - Reverse Leakage @ Vr | Current - Average Rectified (Io) | Voltage - DC Reverse (Vr) (Max) [Max] | Capacitance @ Vr, F | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Reverse Recovery Time (trr) | Technology | Mounting Type | Speed | Supplier Device Package | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | TO-247-2 | 40 µA | 212 A | 1.2 kV | 3263 pF | 175 ░C | -55 C | 0 ns | SiC (Silicon Carbide) Schottky | Through Hole | No Recovery Time | TO-247-2 | 1.8 V |