IC DRAM 256MBIT PAR 54VFBGA
| Part | Memory Size | Package / Case | Access Time | Supplier Device Package | Operating Temperature [Max] | Operating Temperature [Min] | Memory Type | Memory Interface | Clock Frequency | Memory Format | Mounting Type | Technology | Write Cycle Time - Word, Page | Voltage - Supply [Max] | Voltage - Supply [Min] | Memory Organization | Grade | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Micron Technology Inc. | 256 Gbit | 54-VFBGA | 5.4 ns | 54-VFBGA (8x8) | 70 °C | 0 °C | Volatile | Parallel | 167 MHz | DRAM | Surface Mount | SDRAM | 12 ns | 3.6 V | 3 V | 16 M | ||
Micron Technology Inc. | 256 Gbit | 5.4 ns | 54-TSOP II | 70 °C | 0 °C | Volatile | Parallel | 133 MHz | DRAM | Surface Mount | SDRAM | 14 ns | 3.6 V | 3 V | 16 M | |||
Micron Technology Inc. | 256 Gbit | 5.4 ns | 54-TSOP II | 70 °C | 0 °C | Volatile | Parallel | 167 MHz | DRAM | Surface Mount | SDRAM | 12 ns | 3.6 V | 3 V | 16 M | |||
Micron Technology Inc. | 256 Gbit | 54-VFBGA | 5.4 ns | 54-VFBGA (8x8) | 85 °C | -40 °C | Volatile | Parallel | 167 MHz | DRAM | Surface Mount | SDRAM | 12 ns | 3.6 V | 3 V | 16 M | Automotive | AEC-Q100 |
Micron Technology Inc. | 256 Gbit | 5.4 ns | 54-TSOP II | 70 °C | 0 °C | Volatile | Parallel | 133 MHz | DRAM | Surface Mount | SDRAM | 15 ns | 3.6 V | 3 V | 16 M | |||
Micron Technology Inc. | 256 Gbit | 5.4 ns | 54-TSOP II | 105 °C | -40 °C | Volatile | Parallel | 167 MHz | DRAM | Surface Mount | SDRAM | 12 ns | 3.6 V | 3 V | 16 M | Automotive | AEC-Q100 | |
Micron Technology Inc. | 256 Gbit | 54-VFBGA | 5.4 ns | 54-VFBGA (8x14) | 70 °C | 0 °C | Volatile | Parallel | 133 MHz | DRAM | Surface Mount | SDRAM | 15 ns | 3.6 V | 3 V | 16 M | ||
Micron Technology Inc. | 256 Gbit | 54-VFBGA | 5.4 ns | 54-VFBGA (8x8) | 85 °C | -40 °C | Volatile | Parallel | 167 MHz | DRAM | Surface Mount | SDRAM | 12 ns | 3.6 V | 3 V | 16 M | Automotive | AEC-Q100 |
Micron Technology Inc. | 256 Gbit | 54-VFBGA | 5.4 ns | 54-VFBGA (8x8) | 70 °C | 0 °C | Volatile | Parallel | 133 MHz | DRAM | Surface Mount | SDRAM | 14 ns | 3.6 V | 3 V | 16 M | ||
Micron Technology Inc. | 256 Gbit | 54-VFBGA | 5.4 ns | 54-VFBGA (8x8) | 85 °C | -40 °C | Volatile | Parallel | 167 MHz | DRAM | Surface Mount | SDRAM | 12 ns | 3.6 V | 3 V | 16 M |