ZXMP3F30FH Series

P-Channel Enhancement Mode MOSFET

Catalog

P-Channel Enhancement Mode MOSFET

Part	Technology	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Vgs (Max)	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Current - Continuous Drain (Id) @ 25°C
Diodes Inc ZXMP3F30FHTA	MOSFET (Metal Oxide)	Surface Mount	4.5 V 10 V	7 nC	SOT-23-3	30 V	1 V	20 V	80 mOhm	950 mW	P-Channel	-55 °C	150 °C	370 pF	SC-59 SOT-23-3 TO-236-3	2.8 A

Catalog

P-Channel Enhancement Mode MOSFET

Key Features

• Low On-Resistance

• Fast Switching Speed

• 5V Gate Drive Capability

• Thermally Enhanced SOT23 package

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found athttps://www.diodes.com/products/automotive/automotiveproducts/.

• This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability.https://www.diodes.com/quality/product-definitions/

Description

This new generation Trench MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance.