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DIODE MOD SCHOTT 30V 200A 2TOWER
| Part | Voltage - DC Reverse (Vr) (Max) [Max] | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Current - Average Rectified (Io) (per Diode) | Speed | Technology | Mounting Type | Voltage - Forward (Vf) (Max) @ If | Supplier Device Package | Current - Reverse Leakage @ Vr | Package / Case | Diode Configuration |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 30 V | 150 °C | -55 °C | 200 A | 200 mA 500 ns | Schottky | Chassis Mount | 580 mV | Twin Tower | 3 mA | Twin Tower | 1 Pair Common Anode |
GeneSiC Semiconductor | 30 V | 150 °C | -55 °C | 200 A | 200 mA 500 ns | Schottky | Chassis Mount | 580 mV | Twin Tower | 3 mA | Twin Tower | 1 Pair Common Cathode |