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DIODE SIL CARB 1.7KV 216A TO247
| Part | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Technology | Capacitance @ Vr, F | Voltage - Forward (Vf) (Max) @ If | Supplier Device Package | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Average Rectified (Io) | Mounting Type | Speed | Current - Reverse Leakage @ Vr | Package / Case | Reverse Recovery Time (trr) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 175 ░C | -55 C | SiC (Silicon Carbide) Schottky | 3193 pF | 1.8 V | TO-247-2 | 1700 V | 216 A | Through Hole | No Recovery Time | 60 µA | TO-247-2 | 0 ns |