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MOSFET N-CH 600V 650MA/8A 4DFN
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Type | Technology | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Package / Case | Vgs (Max) | Supplier Device Package | Mounting Type | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Alpha & Omega Semiconductor Inc. | 11 nC | N-Channel | MOSFET (Metal Oxide) | 8.3 W 156 W | 10 V | -55 °C | 150 °C | 4.1 V | 4-PowerTSFN | 30 V | 4-DFN (8x8) | Surface Mount | 500 mOhm | 600 V | 8 A 650 mA | 545 pF |