SYNCHRONOUS DRAM, 2MX16, 6NS, CMOS, PBGA54, 8 X 8 MM, LEAD FREE, TFBGA-54
| Part | Voltage - Supply [Max] | Voltage - Supply [Min] | Access Time | Operating Temperature [Max] | Operating Temperature [Min] | Mounting Type | Memory Size | Supplier Device Package | Package / Case | Memory Organization | Clock Frequency | Memory Type | Memory Interface | Memory Format | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ISSI, Integrated Silicon Solution Inc | 1.95 V | 1.7 V | 6 ns | 85 °C | -40 °C | Surface Mount | 32 Gbit | 54-TFBGA (8x8) | 54-TFBGA | 2 M | 133 MHz | Volatile | Parallel | DRAM | SDRAM - Mobile |
ISSI, Integrated Silicon Solution Inc | 1.95 V | 1.7 V | 6 ns | 85 °C | -40 °C | Surface Mount | 32 Gbit | 54-TFBGA (8x8) | 54-TFBGA | 2 M | 133 MHz | Volatile | Parallel | DRAM | SDRAM - Mobile |
ISSI, Integrated Silicon Solution Inc | 1.95 V | 1.7 V | 6 ns | 85 °C | -40 °C | Surface Mount | 32 Gbit | 54-TFBGA (8x8) | 54-TFBGA | 2 M | 133 MHz | Volatile | Parallel | DRAM | SDRAM - Mobile |
ISSI, Integrated Silicon Solution Inc | 1.95 V | 1.7 V | 6 ns | 85 °C | -40 °C | Surface Mount | 32 Gbit | 54-TFBGA (8x8) | 54-TFBGA | 2 M | 133 MHz | Volatile | Parallel | DRAM | SDRAM - Mobile |