MURTA600 Series

Catalog

DIODE MODULE GP 400V 300A 3TOWER

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Reverse Recovery Time (trr)	Technology	Package / Case	Current - Average Rectified (Io) (per Diode)	Voltage - Forward (Vf) (Max) @ If	Speed	Supplier Device Package	Diode Configuration	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Speed
GeneSiC Semiconductor MURTA60040R	150 °C	-55 °C	220 ns	Standard	Three Tower	300 A	1.5 V	200 mA 500 ns	Three Tower	1 Pair Common Anode	Chassis Mount	400 V
GeneSiC Semiconductor MURTA60040	150 °C	-55 °C	220 ns	Standard	Three Tower	300 A	1.5 V	200 mA 500 ns	Three Tower	1 Pair Common Cathode	Chassis Mount	400 V
GeneSiC Semiconductor MURTA60060	150 °C	-55 °C	280 ns	Standard	Three Tower	300 A	1.7 V	200 mA 500 ns	Three Tower	1 Pair Common Cathode	Chassis Mount	600 V
GeneSiC Semiconductor MURTA60020	150 °C	-55 °C	200 ns	Standard	Three Tower	300 A	1.3 V	200 mA 500 ns	Three Tower	1 Pair Common Cathode	Chassis Mount	200 V
GeneSiC Semiconductor MURTA600120R	150 °C	-55 °C		Standard	Three Tower	300 A	2.6 V	200 mA	Three Tower	1 Pair Common Anode	Chassis Mount	1.2 kV	Standard Recovery >500ns