Complementary Pair Enhancement Mode MOSFET
Complementary Pair Enhancement Mode MOSFET
| Part | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Configuration | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Power - Max [Max] | FET Feature | Package / Case | Package / Case [y] | Package / Case [x] | Rds On (Max) @ Id, Vgs [Max] | Drain to Source Voltage (Vdss) | Technology | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 1021 pF 1063 pF | Surface Mount | 20.4 nC | 1 V | N and P-Channel | 8-SO | 2.6 A 3.6 A | 1.25 W | Logic Level Gate | 8-SOIC | 3.9 mm | 0.154 in | 55 mOhm | 60 V | MOSFET (Metal Oxide) | -55 °C | 150 °C |