MBRT400 Series

Catalog

DIODE MOD SCHOTT 40V 200A 3TOWER

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Speed	Technology	Diode Configuration	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io) (per Diode)
GeneSiC Semiconductor MBRT40040R	40 V	Chassis Mount	200 mA 500 ns	Schottky	1 Pair Common Anode	Three Tower	150 °C	-55 °C	750 mV	Three Tower	1 mA	200 A
GeneSiC Semiconductor MBRT40035RL	35 V	Chassis Mount	200 mA 500 ns	Schottky	1 Pair Common Anode	Three Tower	150 °C	-55 °C	600 mV	Three Tower	3 mA	200 A
GeneSiC Semiconductor MBRT40060	60 V	Chassis Mount	200 mA 500 ns	Schottky	1 Pair Common Cathode	Three Tower	150 °C	-55 °C	800 mV	Three Tower	1 mA	200 A
GeneSiC Semiconductor MBRT400150R		Chassis Mount	200 mA 500 ns	Schottky	1 Pair Common Anode	Three Tower	150 °C	-55 °C	880 mV	Three Tower	1 mA	200 A
GeneSiC Semiconductor MBRT40035R	35 V	Chassis Mount	200 mA 500 ns	Reverse Polarity Schottky	1 Pair Common Anode	Three Tower	150 °C	-55 °C	750 mV	Three Tower	1 mA	200 A
GeneSiC Semiconductor MBRT40035	35 V	Chassis Mount	200 mA 500 ns	Schottky	1 Pair Common Cathode	Three Tower	150 °C	-55 °C	750 mV	Three Tower	1 mA	200 A
GeneSiC Semiconductor MBRT400150		Chassis Mount	200 mA 500 ns	Schottky	1 Pair Common Cathode	Three Tower	150 °C	-55 °C	880 mV	Three Tower	1 mA	200 A
GeneSiC Semiconductor MBRT40045DL	45 V	Chassis Mount	200 mA 500 ns	Schottky	1 Pair Series Connection	Three Tower	100 °C	-40 °C	580 mV	Three Tower	5 mA	200 A
GeneSiC Semiconductor MBRT40040RL	40 V	Chassis Mount	200 mA 500 ns	Schottky	1 Pair Common Anode	Three Tower	150 °C	-55 °C	600 mV	Three Tower	3 mA	200 A
GeneSiC Semiconductor MBRT40030RL	30 V	Chassis Mount	200 mA 500 ns	Schottky	1 Pair Common Anode	Three Tower	150 °C	-55 °C	580 mV	Three Tower	3 mA	200 A