DIODE SCHOTTKY 120V 20A TO262AA
| Part | Supplier Device Package | Current - Reverse Leakage @ Vr | Speed | Mounting Type | Voltage - Forward (Vf) (Max) @ If | Technology | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Package / Case | Voltage - DC Reverse (Vr) (Max) [Max] | Diode Configuration | Current - Average Rectified (Io) (per Diode) | Qualification | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | TO-262AA | 300 µA | 200 mA 500 ns | Through Hole | 1.12 V | Schottky | 150 °C | -40 °C | I2PAK TO-262-3 Long Leads TO-262AA | 120 V | ||||
Vishay General Semiconductor - Diodes Division | TO-262AA | 700 µA | 200 mA 500 ns | Through Hole | 900 mV | Schottky | 150 °C | -40 °C | I2PAK TO-262-3 Long Leads TO-262AA | 120 V | 1 Pair Common Cathode | 10 A | ||
Vishay General Semiconductor - Diodes Division | TO-262AA | 250 µA | 200 mA 500 ns | Through Hole | Schottky | 150 °C | -40 °C | I2PAK TO-262-3 Long Leads TO-262AA | 120 V | |||||
Vishay General Semiconductor - Diodes Division | TO-262AA | 300 µA | 200 mA 500 ns | Through Hole | 1.12 V | Schottky | 150 °C | -40 °C | I2PAK TO-262-3 Long Leads TO-262AA | 120 V | ||||
Vishay General Semiconductor - Diodes Division | TO-262AA | 700 µA | 200 mA 500 ns | Through Hole | 900 mV | Schottky | 150 °C | -40 °C | I2PAK TO-262-3 Long Leads TO-262AA | 120 V | 1 Pair Common Cathode | 10 A | AEC-Q101 | Automotive |