MAT01 Series

Matched Monolithic Dual Transistor

Catalog

Matched Monolithic Dual Transistor

Part	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Package / Case	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Mounting Type	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package
Analog Devices MAT01AHZ	25 mA	300 nA	TO-78-6 Metal Can	800 mV	2 NPN (Dual) Matched Pair	Through Hole	500 mW	45 V	450 MHz	-55 °C	150 °C	TO-78-6

Catalog

Matched Monolithic Dual Transistor

Key Features

• Low VOS(VBEmatch): 40 μV typical, 100 μV maximum

• Low TCVOS: 0.5 μV/°C maximum

• High hFE: 500 minimum

• Low noise voltage:0.23 μV p-p from 0.1 Hz to 10 Hz

• High breakdown: 45 V min

• Excellent hFElinearity from 10 nA to 10 mA

Description

The MAT01 is a monolithic dual NPN transistor. An exclusive Silicon Nitride "Triple-Passivation" process provides excellent stability of critical parameters over both temperature and time. Matching characteristics include offset voltage of 40µV, temperature drift of 0.15µV/°C, and hFEmatching of 0.7%.Very high h is provided over a six decade range of collector current, including an exceptional hFEof 590 at a collector current of only 10nA. The high gain at lower collector current makes the MAT01 ideal for use in low-power, low-level input stages.APPLICATIONSWeigh scalesLow noise, op amp, front endCurrent mirror and current sink/sourceLow noise instrumentation amplifiersVoltage controlled attenuatorsLog amplifiers