650V N-CHANNEL MOSFET
| Part | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Technology | Vgs (Max) | Package / Case | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Panjit International Inc. | 4 A | Surface Mount | 77 W | 11.4 nC | 10 V | 463 pF | 4 V | 2.7 Ohm | MOSFET (Metal Oxide) | 30 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | N-Channel | -55 °C | 150 °C | TO-252 | 650 V |
Panjit International Inc. | 4 A | Surface Mount | 11.4 nC | 10 V | 463 pF | 4 V | 2.7 Ohm | MOSFET (Metal Oxide) | 30 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | N-Channel | -55 °C | 150 °C | TO-252AA | 650 V |