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DIODE MODULE GP 800V 400A 3TOWER
| Part | Speed | Speed | Current - Reverse Leakage @ Vr | Package / Case | Supplier Device Package | Mounting Type | Diode Configuration | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Average Rectified (Io) (per Diode) | Technology | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | Standard Recovery >500ns | 200 mA | 25 µA | Three Tower | Three Tower | Chassis Mount | 1 Pair Common Cathode | 150 °C | -55 °C | 800 V | 400 A | Standard | 1.2 V |