Beta
⌘K
60V N-CHANNEL ENHANCEMENT MODE M
| Part | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Supplier Device Package | Vgs (Max) | FET Type | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Panjit International Inc. | 1680 pF | 21 mOhm | 28 nC | TO-220-3 | 4.5 V 10 V | MOSFET (Metal Oxide) | -55 °C | 150 °C | Through Hole | TO-220AB | 20 V | N-Channel | 4.7 A 35 A | 60 V | 2.5 V | 2 W 104 W |