MOSFET N-CH 700V 8.5A TO262F
| Part | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Vgs (Max) | Technology | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Input Capacitance (Ciss) (Max) @ Vds [Max] | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Alpha & Omega Semiconductor Inc. | 700 V | 600 mOhm | 20 V | MOSFET (Metal Oxide) | 4 V | 14.5 nC | 25 W | N-Channel | -55 °C | 150 °C | I2PAK TO-262-3 Long Leads TO-262AA | 900 pF | TO-262F | 10 V | Through Hole | 8.5 A | |
Alpha & Omega Semiconductor Inc. | 600 V | 600 mOhm | 20 V | MOSFET (Metal Oxide) | 3.5 V | 11.5 nC | 23 W | N-Channel | -55 °C | 150 °C | I2PAK TO-262-3 Long Leads TO-262AA | TO-262F | 10 V | Through Hole | 8 A | 608 pF | |
Alpha & Omega Semiconductor Inc. | 700 V | 600 mOhm | 20 V | MOSFET (Metal Oxide) | 3.5 V | 15.5 nC | 25 W | N-Channel | -55 °C | 150 °C | I2PAK TO-262-3 Long Leads TO-262AA | TO-262F | 10 V | Through Hole | 8.5 A | 870 pF |