IC DRAM 256MBIT PAR 66TSOP II
| Part | Operating Temperature [Max] | Operating Temperature [Min] | Voltage - Supply [Max] | Voltage - Supply [Min] | Access Time | Clock Frequency | Memory Format | Mounting Type | Package / Case [custom] | Package / Case | Package / Case [custom] | Memory Size | Write Cycle Time - Word, Page | Memory Organization | Supplier Device Package | Memory Type | Memory Interface |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ISSI, Integrated Silicon Solution Inc | 70 °C | 0 °C | 2.7 V | 2.3 V | 700 ps | 166 MHz | DRAM | Surface Mount | 0.4 in | 66-TSSOP | 0.4 in | 256 Gbit | 15 ns | 32 M | 66-TSOP II | Volatile | Parallel |
ISSI, Integrated Silicon Solution Inc | 70 °C | 0 °C | 2.7 V | 2.3 V | 700 ps | 200 MHz | DRAM | Surface Mount | 0.4 in | 66-TSSOP | 0.4 in | 256 Gbit | 15 ns | 32 M | 66-TSOP II | Volatile | Parallel |
ISSI, Integrated Silicon Solution Inc | 85 °C | -40 °C | 2.7 V | 2.3 V | 700 ps | 166 MHz | DRAM | Surface Mount | 0.4 in | 66-TSSOP | 0.4 in | 256 Gbit | 15 ns | 32 M | 66-TSOP II | Volatile | Parallel |
ISSI, Integrated Silicon Solution Inc | 70 °C | 0 °C | 2.7 V | 2.3 V | 700 ps | 166 MHz | DRAM | Surface Mount | 0.4 in | 66-TSSOP | 0.4 in | 256 Gbit | 15 ns | 32 M | 66-TSOP II | Volatile | Parallel |
ISSI, Integrated Silicon Solution Inc | 70 °C | 0 °C | 2.7 V | 2.3 V | 700 ps | 200 MHz | DRAM | Surface Mount | 0.4 in | 66-TSSOP | 0.4 in | 256 Gbit | 15 ns | 32 M | 66-TSOP II | Volatile | Parallel |
ISSI, Integrated Silicon Solution Inc | 85 °C | -40 °C | 2.7 V | 2.3 V | 700 ps | 166 MHz | DRAM | Surface Mount | 0.4 in | 66-TSSOP | 0.4 in | 256 Gbit | 15 ns | 32 M | 66-TSOP II | Volatile | Parallel |
ISSI, Integrated Silicon Solution Inc | 70 °C | 0 °C | 2.7 V | 2.3 V | 700 ps | 200 MHz | DRAM | Surface Mount | 0.4 in | 66-TSSOP | 0.4 in | 256 Gbit | 15 ns | 32 M | 66-TSOP II | Volatile | Parallel |
ISSI, Integrated Silicon Solution Inc | 70 °C | 0 °C | 2.7 V | 2.3 V | 700 ps | 166 MHz | DRAM | Surface Mount | 0.4 in | 66-TSSOP | 0.4 in | 256 Gbit | 15 ns | 32 M | 66-TSOP II | Volatile | Parallel |
ISSI, Integrated Silicon Solution Inc | 70 °C | 0 °C | 2.7 V | 2.3 V | 700 ps | 200 MHz | DRAM | Surface Mount | 0.4 in | 66-TSSOP | 0.4 in | 256 Gbit | 15 ns | 32 M | 66-TSOP II | Volatile | Parallel |