IC SRAM 256KBIT PARALLEL 28CDIP
| Part | Access Time | Memory Format | Technology | Memory Size | Operating Temperature [Max] | Operating Temperature [Min] | Memory Organization | Package / Case | Package / Case | Package / Case | Mounting Type | Memory Type | Supplier Device Package | Voltage - Supply [Min] | Voltage - Supply [Max] | Memory Interface | Write Cycle Time - Word, Page |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IDT, Integrated Device Technology Inc | 35 ns | SRAM | SRAM - Asynchronous | 32 KB | 125 °C | -55 °C | 32K x 8 | 15.24 mm | 0.6 in | 28-CDIP | Through Hole | Volatile | 28-CDIP | 4.5 V | 5.5 V | Parallel | 35 ns |
IDT, Integrated Device Technology Inc | 85 ns | SRAM | SRAM - Asynchronous | 32 KB | 125 °C | -55 °C | 32K x 8 | 15.24 mm | 0.6 in | 28-CDIP | Through Hole | Volatile | 28-CDIP | 4.5 V | 5.5 V | Parallel | 85 ns |
IDT, Integrated Device Technology Inc | 25 ns | SRAM | SRAM - Asynchronous | 32 KB | 125 °C | -55 °C | 32K x 8 | 15.24 mm | 0.6 in | 28-CDIP | Through Hole | Volatile | 28-CDIP | 4.5 V | 5.5 V | Parallel | 25 ns |
IDT, Integrated Device Technology Inc | 85 ns | SRAM | SRAM - Asynchronous | 32 KB | 125 °C | -55 °C | 32K x 8 | 7.62 mm | 0.3 in | 28-CDIP | Through Hole | Volatile | 28-CDIP | 4.5 V | 5.5 V | Parallel | 85 ns |