2SC2235 Series

Manufacturer: Toshiba Semiconductor and Storage

Catalog

TRANS NPN 120V 0.8A TO92MOD

Part	Package / Case	Operating Temperature	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Mounting Type	Power - Max [Max]	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Voltage - Collector Emitter Breakdown (Max) [Max]
Toshiba Semiconductor and Storage 2SC2235-Y,F(J	TO-226-3 TO-92-3 Long Body	150 °C	100 nA	TO-92MOD	800 mA	Through Hole	900 mW	120 MHz	80	1 V	NPN	120 V
Toshiba Semiconductor and Storage 2SC2235-Y(T6CN,A,F	TO-226-3 TO-92-3 Long Body	150 °C	100 nA	TO-92MOD	800 mA	Through Hole	900 mW	120 MHz	80	1 V	NPN	120 V
Toshiba Semiconductor and Storage 2SC2235-Y(T6OMI,FM	TO-226-3 TO-92-3 Long Body	150 °C	100 nA	TO-92MOD	800 mA	Through Hole	900 mW	120 MHz	80	1 V	NPN	120 V
Toshiba Semiconductor and Storage 2SC2235-O,F(J	TO-226-3 TO-92-3 Long Body	150 °C	100 nA	TO-92MOD	800 mA	Through Hole	900 mW	120 MHz	80	1 V	NPN	120 V
Toshiba Semiconductor and Storage 2SC2235-Y(T6ND,AF	TO-226-3 TO-92-3 Long Body	150 °C	100 nA	TO-92MOD	800 mA	Through Hole	900 mW	120 MHz	80	1 V	NPN	120 V
Toshiba Semiconductor and Storage 2SC2235-Y(T6CANOFM	TO-226-3 TO-92-3 Long Body	150 °C	100 nA	TO-92MOD	800 mA	Through Hole	900 mW	120 MHz	80	1 V	NPN	120 V
Toshiba Semiconductor and Storage 2SC2235-Y(T6KMATFM	TO-226-3 TO-92-3 Long Body	150 °C	100 nA	TO-92MOD	800 mA	Through Hole	900 mW	120 MHz	80	1 V	NPN	120 V
Toshiba Semiconductor and Storage 2SC2235-Y(DNSO,AF)	TO-226-3 TO-92-3 Long Body	150 °C	100 nA	TO-92MOD	800 mA	Through Hole	900 mW	120 MHz	80	1 V	NPN	120 V
Toshiba Semiconductor and Storage 2SC2235-Y(6MBH1,AF	TO-226-3 TO-92-3 Long Body	150 °C	100 nA	TO-92MOD	800 mA	Through Hole	900 mW	120 MHz	80	1 V	NPN	120 V
Toshiba Semiconductor and Storage 2SC2235-Y,T6USNF(M	TO-226-3 TO-92-3 Long Body	150 °C	100 nA	TO-92MOD	800 mA	Through Hole	900 mW	120 MHz	80	1 V	NPN	120 V