ZXMP10A18KQ Series

P-Channel Enhancement Mode MOSFET

Catalog

P-Channel Enhancement Mode MOSFET

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Vgs (Max)	Mounting Type	Qualification	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Grade	Technology	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs
Diodes Inc ZXMP10A18KQTC	26.9 nC	P-Channel	20 V	Surface Mount	AEC-Q101	100 V	15 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	Automotive	MOSFET (Metal Oxide)	TO-252 (DPAK)	1055 pF	71 W	4 V	-55 °C	150 °C	6 V 10 V	150 mOhm

Catalog

P-Channel Enhancement Mode MOSFET

Key Features

• 100% Unclamped Inductive Switch (UIS) Test in Production

• Low On-Resistance

• Fast Switching Speed

• Low Gate Drive

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• The DIODES™ ZXMP10A18KQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.https://www.diodes.com/quality/product-definitions/

Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: DC-DC converters, power management functions, disconnect switches, motor controls.