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MOSFET N-CH 650V 3.5A TO220SIS
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Package / Case | Vgs(th) (Max) @ Id | Operating Temperature | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Technology | Drain to Source Voltage (Vdss) | FET Type | Supplier Device Package | Power Dissipation (Max) [Max] | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 12 nC | TO-220-3 Full Pack | 4.4 V | 150 °C | Through Hole | 3.5 A | MOSFET (Metal Oxide) | 650 V | N-Channel | TO-220SIS | 35 W | 600 pF | 10 V | 1.9 Ohm | 30 V |