DIODE GEN PURP 200V 3A DO201AD
| Part | Technology | Package / Case | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Mounting Type | Capacitance @ Vr, F | Current - Average Rectified (Io) | Voltage - DC Reverse (Vr) (Max) [Max] | Supplier Device Package | Speed | Speed | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
SMC Diode Solutions | Standard | DO-201AD Axial | 5 µA | 1.1 V | Through Hole | 30 pF | 3 A | 200 V | DO-201AD | Standard Recovery >500ns | 200 mA | 150 °C | -65 C |
SMC Diode Solutions | Standard | DO-201AD Axial | 5 µA | 1.2 V | Through Hole | 30 pF | 3 A | 100 V | DO-201AD | Standard Recovery >500ns | 200 mA | 175 ░C | -65 C |
SMC Diode Solutions | Standard | DO-201AD Axial | 5 µA | 1.2 V | Through Hole | 30 pF | 3 A | 600 V | DO-201AD | Standard Recovery >500ns | 200 mA | 175 ░C | -65 C |
SMC Diode Solutions | Standard | DO-201AD Axial | 5 µA | 1.2 V | Through Hole | 30 pF | 3 A | 200 V | DO-201AD | Standard Recovery >500ns | 200 mA | 175 ░C | -65 C |
SMC Diode Solutions | Standard | DO-201AD Axial | 5 µA | 1.1 V | Through Hole | 30 pF | 3 A | 50 V | DO-201AD | Standard Recovery >500ns | 200 mA | 150 °C | -65 C |
SMC Diode Solutions | Standard | DO-201AD Axial | 5 µA | 1.2 V | Through Hole | 30 pF | 3 A | 400 V | DO-201AD | Standard Recovery >500ns | 200 mA | 175 ░C | -65 C |
SMC Diode Solutions | Standard | DO-201AD Axial | 5 µA | 1.2 V | Through Hole | 30 pF | 3 A | 800 V | DO-201AD | Standard Recovery >500ns | 200 mA | 175 ░C | -65 C |
SMC Diode Solutions | Standard | DO-201AD Axial | 5 µA | 1.1 V | Through Hole | 30 pF | 3 A | 1000 V | DO-201AD | Standard Recovery >500ns | 200 mA | 150 °C | -65 C |
SMC Diode Solutions | Standard | DO-201AD Axial | 5 µA | 1.1 V | Through Hole | 30 pF | 3 A | 100 V | DO-201AD | Standard Recovery >500ns | 200 mA | 150 °C | -65 C |
SMC Diode Solutions | Standard | DO-201AD Axial | 5 µA | 1.1 V | Through Hole | 30 pF | 3 A | 600 V | DO-201AD | Standard Recovery >500ns | 200 mA | 150 °C | -65 C |