Beta
⌘K
MOSFET N-CH 600V 25A 4DFN
| Part | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Technology | Power Dissipation (Max) | Operating Temperature | FET Type | Rds On (Max) @ Id, Vgs | Package / Case | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 10 V | 40 nC | 600 V | 25 A | 4-DFN-EP (8x8) | 30 V | 2400 pF | Surface Mount | MOSFET (Metal Oxide) | 180 W | 150 °C | N-Channel | 135 mOhm | 4-VSFN Exposed Pad | 3.5 V |