Beta
⌘K
MOSFET N-CH 40V 80A DPAK
| Part | Vgs (Max) | Technology | Operating Temperature | Current - Continuous Drain (Id) @ 25°C | FET Type | Power Dissipation (Max) [Max] | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Package / Case | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 20 V | MOSFET (Metal Oxide) | 175 °C | 80 A | N-Channel | 100 W | 3.1 mOhm | 3 V | Surface Mount | 6 V 10 V | 40 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | DPAK+ | 87 nC |