IC DRAM 2GBIT PAR 78TWBGA
| Part | Memory Type | Supplier Device Package [x] | Supplier Device Package | Supplier Device Package [y] | Write Cycle Time - Word, Page | Operating Temperature [Max] | Operating Temperature [Min] | Memory Organization | Memory Format | Access Time | Technology | Memory Size | Voltage - Supply [Max] | Voltage - Supply [Min] | Clock Frequency | Mounting Type | Memory Interface | Grade | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ISSI, Integrated Silicon Solution Inc | Volatile | 8 | 78-TWBGA | 10.5 | 15 ns | 95 °C | 0 °C | 256M x 8 | DRAM | 20 ns | SDRAM - DDR3L | 2 Gbit | 1.45 V | 1.283 V | 667 MHz | Surface Mount | Parallel | ||
ISSI, Integrated Silicon Solution Inc | Volatile | 8 | 78-TWBGA | 10.5 | 15 ns | 95 °C | 0 °C | 256M x 8 | DRAM | 20 ns | SDRAM - DDR3L | 2 Gbit | 1.45 V | 1.283 V | 667 MHz | Surface Mount | Parallel | ||
ISSI, Integrated Silicon Solution Inc | |||||||||||||||||||
ISSI, Integrated Silicon Solution Inc | Volatile | 8 | 78-TWBGA | 10.5 | 15 ns | 95 °C | 0 °C | 256M x 8 | DRAM | 20 ns | SDRAM - DDR3 | 2 Gbit | 1.575 V | 1.425 V | 667 MHz | Surface Mount | Parallel | ||
ISSI, Integrated Silicon Solution Inc | Volatile | 8 | 78-TWBGA | 10.5 | 15 ns | 95 °C | -40 °C | 256M x 8 | DRAM | 20 ns | SDRAM - DDR3L | 2 Gbit | 1.45 V | 1.283 V | 800 MHz | Surface Mount | Parallel | ||
ISSI, Integrated Silicon Solution Inc | Volatile | 8 | 78-TWBGA | 10.5 | 15 ns | 95 °C | 0 °C | 256M x 8 | DRAM | 20 ns | SDRAM - DDR3L | 2 Gbit | 1.45 V | 1.283 V | 800 MHz | Surface Mount | Parallel | Automotive | AEC-Q100 |
ISSI, Integrated Silicon Solution Inc | Volatile | 8 | 78-TWBGA | 10.5 | 15 ns | 95 °C | -40 °C | 256M x 8 | DRAM | 20 ns | SDRAM - DDR3 | 2 Gbit | 1.575 V | 1.425 V | 800 MHz | Surface Mount | Parallel | ||
ISSI, Integrated Silicon Solution Inc | Volatile | 8 | 78-TWBGA | 10.5 | 15 ns | 95 °C | -40 °C | 256M x 8 | DRAM | 20 ns | SDRAM - DDR3 | 2 Gbit | 1.575 V | 1.425 V | 800 MHz | Surface Mount | Parallel | ||
ISSI, Integrated Silicon Solution Inc | Volatile | 8 | 78-TWBGA | 10.5 | 15 ns | 95 °C | -40 °C | 256M x 8 | DRAM | 20 ns | SDRAM - DDR3 | 2 Gbit | 1.575 V | 1.425 V | 800 MHz | Surface Mount | Parallel | ||
ISSI, Integrated Silicon Solution Inc | Volatile | 8 | 78-TWBGA | 10.5 | 15 ns | 95 °C | -40 °C | 256M x 8 | DRAM | 20 ns | SDRAM - DDR3L | 2 Gbit | 1.45 V | 1.283 V | 800 MHz | Surface Mount | Parallel |