TRANS NPN 50V 2A TO92MOD
| Part | Mounting Type | Vce Saturation (Max) @ Ib, Ic | Frequency - Transition | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Current - Collector (Ic) (Max) [Max] | Power - Max [Max] | Voltage - Collector Emitter Breakdown (Max) [Max] | Current - Collector Cutoff (Max) [Max] | Package / Case | Transistor Type | Operating Temperature | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | Through Hole | 500 mV | 100 MHz | 70 | 2 A | 900 mW | 50 V | 1 µA | TO-226-3 TO-92-3 Long Body | NPN | 150 °C | TO-92MOD |
Toshiba Semiconductor and Storage | Through Hole | 500 mV | 100 MHz | 70 | 2 A | 900 mW | 50 V | 1 µA | TO-226-3 TO-92-3 Long Body | NPN | 150 °C | TO-92MOD |
Toshiba Semiconductor and Storage | Through Hole | 500 mV | 100 MHz | 70 | 2 A | 900 mW | 50 V | 1 µA | TO-226-3 TO-92-3 Long Body | NPN | 150 °C | TO-92MOD |
Toshiba Semiconductor and Storage | Through Hole | 500 mV | 100 MHz | 70 | 2 A | 900 mW | 50 V | 1 µA | TO-226-3 TO-92-3 Long Body | NPN | 150 °C | TO-92MOD |
Toshiba Semiconductor and Storage | Through Hole | 500 mV | 100 MHz | 70 | 2 A | 900 mW | 50 V | 1 µA | TO-226-3 TO-92-3 Long Body | NPN | 150 °C | TO-92MOD |
Toshiba Semiconductor and Storage | Through Hole | 500 mV | 100 MHz | 70 | 2 A | 900 mW | 50 V | 1 µA | TO-226-3 TO-92-3 Long Body | NPN | 150 °C | TO-92MOD |
Toshiba Semiconductor and Storage | Through Hole | 500 mV | 100 MHz | 70 | 2 A | 900 mW | 50 V | 1 µA | TO-226-3 TO-92-3 Long Body | NPN | 150 °C | TO-92MOD |