1N5062 Series

Catalog

DIODE GEN PURP 800V 1A DO204AC

Part	Capacitance @ Vr, F	Technology	Reverse Recovery Time (trr)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Supplier Device Package	Current - Average Rectified (Io)	Mounting Type	Package / Case	Voltage - Forward (Vf) (Max) @ If	Speed	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr
Vishay General Semiconductor - Diodes Division 1N5062GP-E3/54	15 pF	Standard	2 µs	175 ░C	-65 C	DO-204AC	DO-15	1 A	Through Hole	Axial DO-15 DO-204AC	1.2 V	Standard Recovery >500ns	200 mA	800 V	5 µA
Vishay General Semiconductor - Diodes Division 1N5062GPHE3/54	15 pF	Standard	2 µs	175 ░C	-65 C	DO-204AC	DO-15	1 A	Through Hole	Axial DO-15 DO-204AC	1.2 V	Standard Recovery >500ns	200 mA	800 V	5 µA
Vishay General Semiconductor - Diodes Division 1N5062TR	40 pF	Avalanche	4 µs	175 ░C	-55 C	SOD-57		2 A	Through Hole	Axial SOD-57	1.15 V	Standard Recovery >500ns	200 mA	800 V	1 µA
Vishay General Semiconductor - Diodes Division 1N5062GP-E3/73	15 pF	Standard	2 µs	175 ░C	-65 C	DO-204AC	DO-15	1 A	Through Hole	Axial DO-15 DO-204AC	1.2 V	Standard Recovery >500ns	200 mA	800 V	5 µA
Vishay General Semiconductor - Diodes Division 1N5062GPHE3/73	15 pF	Standard	2 µs	175 ░C	-65 C	DO-204AC	DO-15	1 A	Through Hole	Axial DO-15 DO-204AC	1.2 V	Standard Recovery >500ns	200 mA	800 V	5 µA