IC DRAM 512MBIT PAR 54TSOP II
| Part | Operating Temperature [Max] | Operating Temperature [Min] | Technology | Supplier Device Package | Voltage - Supply [Max] | Voltage - Supply [Min] | Memory Type | Write Cycle Time - Word, Page | Memory Interface | Memory Size | Access Time | Clock Frequency | Memory Format | Memory Organization | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Micron Technology Inc. | 70 °C | 0 °C | SDRAM | 54-TSOP II | 3.6 V | 3 V | Volatile | 15 ns | Parallel | 64 MB | 5.4 ns | 133 MHz | DRAM | 64 M | Surface Mount |
Micron Technology Inc. | 85 °C | -40 °C | SDRAM | 54-TSOP II | 3.6 V | 3 V | Volatile | 15 ns | Parallel | 64 MB | 5.4 ns | 133 MHz | DRAM | 64 M | Surface Mount |
Micron Technology Inc. | 70 °C | 0 °C | SDRAM | 54-TSOP II | 3.6 V | 3 V | Volatile | 15 ns | Parallel | 64 MB | 5.4 ns | 133 MHz | DRAM | 64 M | Surface Mount |
Micron Technology Inc. | 70 °C | 0 °C | SDRAM | 54-TSOP II | 3.6 V | 3 V | Volatile | 15 ns | Parallel | 64 MB | 5.4 ns | 133 MHz | DRAM | 64 M | Surface Mount |
Micron Technology Inc. | 85 °C | -40 °C | SDRAM | 54-TSOP II | 3.6 V | 3 V | Volatile | 15 ns | Parallel | 64 MB | 5.4 ns | 133 MHz | DRAM | 64 M | Surface Mount |
Micron Technology Inc. | 85 °C | -40 °C | SDRAM | 54-TSOP II | 3.6 V | 3 V | Volatile | 15 ns | Parallel | 64 MB | 5.4 ns | 133 MHz | DRAM | 64 M | Surface Mount |