MOSFET N-CHANNEL 600V 4A TO220F
| Part | Drain to Source Voltage (Vdss) | Supplier Device Package | Technology | Rds On (Max) @ Id, Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | FET Type | Package / Case | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) [Max] | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Alpha & Omega Semiconductor Inc. | 600 V | TO-220F | MOSFET (Metal Oxide) | 2.2 Ohm | 615 pF | 18 nC | 30 V | 10 V | -55 °C | 150 °C | Through Hole | N-Channel | TO-220-3 Full Pack | 4.5 V | 4 A | 35 W | |||
Alpha & Omega Semiconductor Inc. | 600 V | TO-220F | MOSFET (Metal Oxide) | 263 pF | 30 V | 10 V | -55 °C | 150 °C | Through Hole | N-Channel | TO-220-3 Full Pack | 4.1 V | 4 A | 900 mOhm | 6 nC | 31 W |