MOSFET N-CH 60V 240MA SOT23-3
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) [Max] | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | Drain to Source Voltage (Vdss) | FET Type | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Package / Case | Technology | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Operating Temperature | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | -55 °C | 150 °C | 350 mW | 21 pF | 20 V | 0.6 nC | SOT-23-3 (TO-236) | 60 V | N-Channel | 3 Ohm | 240 mA | SC-59 SOT-23-3 TO-236-3 | MOSFET (Metal Oxide) | 2.5 V | 4.5 V 10 V | Surface Mount | ||||
Vishay General Semiconductor - Diodes Division | 350 mW | 21 pF | 20 V | 0.6 nC | SOT-23-3 (TO-236) | 60 V | N-Channel | 5 Ohm | 340 mA | SC-59 SOT-23-3 TO-236-3 | MOSFET (Metal Oxide) | 2.5 V | 4.5 V 10 V | Surface Mount | 150 °C | |||||
Vishay General Semiconductor - Diodes Division | -55 °C | 150 °C | 50 pF | 20 V | 60 V | N-Channel | 7.5 Ohm | 115 mA | SC-59 SOT-23-3 TO-236-3 | MOSFET (Metal Oxide) | 2.5 V | Surface Mount | 10 V | 5 V | 200 mW | |||||
Vishay General Semiconductor - Diodes Division | -55 °C | 150 °C | 350 mW | 30 pF | 20 V | 0.6 nC | SOT-23-3 (TO-236) | 60 V | N-Channel | 2 Ohm | 300 mA | SC-59 SOT-23-3 TO-236-3 | MOSFET (Metal Oxide) | 2.5 V | 4.5 V 10 V | Surface Mount |