Beta
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N-Channel MOSFET
| Part | Mounting Type | Technology | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Power Dissipation (Max) [Max] | Vgs(th) (Max) @ Id | Package / Case | FET Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | Surface Mount | MOSFET (Metal Oxide) | 12 V | 4.5 V | 2.7 V | 625 mW | 700 mV | SC-59 SOT-23-3 TO-236-3 | N-Channel | 3.4 nC | 180 mOhm | 20 V | -55 °C | 150 °C | 160 pF | 1.7 A | SOT-23-3 |
Diodes Inc | Surface Mount | MOSFET (Metal Oxide) | 12 V | 4.5 V | 2.7 V | 625 mW | 700 mV | SC-59 SOT-23-3 TO-236-3 | N-Channel | 3.4 nC | 180 mOhm | 20 V | -55 °C | 150 °C | 160 pF | 1.7 A | SOT-23-3 |