Catalog
Military 2-ch, 4-input, 4.5-V to 5.5-V NAND gates
Key Features
• Inputs Are TTL-Voltage CompatibleSpeed of Bipolar F, AS, and S, With Significantly Reduced Power ConsumptionBalanced Propagation Delays±24-mA Output Drive CurrentFanout to 15 F DevicesSCR-Latchup-Resistant CMOS Process and Circuit DesignExceeds 2-kV ESD Protection Per MIL-STD-883, Method 3015Inputs Are TTL-Voltage CompatibleSpeed of Bipolar F, AS, and S, With Significantly Reduced Power ConsumptionBalanced Propagation Delays±24-mA Output Drive CurrentFanout to 15 F DevicesSCR-Latchup-Resistant CMOS Process and Circuit DesignExceeds 2-kV ESD Protection Per MIL-STD-883, Method 3015
Description
AI
The ’ACT20 devices contain two independent 4-input NAND gates. They perform the Boolean function Y = (A • B • C • D)\ or Y = A\ + B\ + C\ + D\ in positive logic.
The ’ACT20 devices contain two independent 4-input NAND gates. They perform the Boolean function Y = (A • B • C • D)\ or Y = A\ + B\ + C\ + D\ in positive logic.