IC DRAM 4GBIT PAR 78TWBGA
| Part | Clock Frequency | Qualification | Technology | Memory Type | Memory Interface | Mounting Type | Voltage - Supply [Max] | Voltage - Supply [Min] | Grade | Memory Organization | Access Time | Operating Temperature [Max] | Operating Temperature [Min] | Memory Format | Supplier Device Package [x] | Supplier Device Package | Supplier Device Package [y] | Memory Size | Write Cycle Time - Word, Page |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ISSI, Integrated Silicon Solution Inc | 933 MHz | AEC-Q100 | SDRAM - DDR3L | Volatile | Parallel | Surface Mount | 1.45 V | 1.283 V | Automotive | 512 M | 20 ns | 95 °C | -40 °C | DRAM | 8 | 78-TWBGA | 10.5 | 512 kb | 15 ns |
ISSI, Integrated Silicon Solution Inc | 667 MHz | SDRAM - DDR3 | Volatile | Parallel | Surface Mount | 1.575 V | 1.425 V | 512 M | 20 ns | 95 °C | -40 °C | DRAM | 9 | 78-TWBGA | 10.5 | 512 kb | 15 ns | ||
ISSI, Integrated Silicon Solution Inc | 667 MHz | SDRAM - DDR3 | Volatile | Parallel | Surface Mount | 1.575 V | 1.425 V | 512 M | 20 ns | 95 °C | 0 °C | DRAM | 9 | 78-TWBGA | 10.5 | 512 kb | 15 ns | ||
ISSI, Integrated Silicon Solution Inc | 933 MHz | AEC-Q100 | SDRAM - DDR3L | Volatile | Parallel | Surface Mount | 1.45 V | 1.283 V | Automotive | 512 M | 20 ns | 95 °C | 0 °C | DRAM | 9 | 78-TWBGA | 10.5 | 512 kb | 15 ns |
ISSI, Integrated Silicon Solution Inc | 667 MHz | SDRAM - DDR3L | Volatile | Parallel | Surface Mount | 1.45 V | 1.283 V | 512 M | 20 ns | 95 °C | 0 °C | DRAM | 9 | 78-TWBGA | 10.5 | 512 kb | 15 ns | ||
ISSI, Integrated Silicon Solution Inc | 667 MHz | SDRAM - DDR3L | Volatile | Parallel | Surface Mount | 1.45 V | 1.283 V | 512 M | 20 ns | 95 °C | 0 °C | DRAM | 9 | 78-TWBGA | 10.5 | 512 kb | 15 ns | ||
ISSI, Integrated Silicon Solution Inc | 933 MHz | AEC-Q100 | SDRAM - DDR3L | Volatile | Parallel | Surface Mount | 1.45 V | 1.283 V | Automotive | 512 M | 20 ns | 95 °C | -40 °C | DRAM | 8 | 78-TWBGA | 10.5 | 512 kb | 15 ns |
ISSI, Integrated Silicon Solution Inc | 667 MHz | SDRAM - DDR3L | Volatile | Parallel | Surface Mount | 1.45 V | 1.283 V | 512 M | 20 ns | 95 °C | -40 °C | DRAM | 9 | 78-TWBGA | 10.5 | 512 kb | 15 ns | ||
ISSI, Integrated Silicon Solution Inc | 933 MHz | AEC-Q100 | SDRAM - DDR3L | Volatile | Parallel | Surface Mount | 1.45 V | 1.283 V | Automotive | 512 M | 20 ns | 95 °C | 0 °C | DRAM | 9 | 78-TWBGA | 10.5 | 512 kb | 15 ns |
ISSI, Integrated Silicon Solution Inc | 800 MHz | SDRAM - DDR3L | Volatile | Parallel | Surface Mount | 1.45 V | 1.283 V | 512 M | 20 ns | 95 °C | 0 °C | DRAM | 9 | 78-TWBGA | 10.5 | 512 kb | 15 ns |