Beta
⌘K
MOSFET N-CH 60V 90A TO252-3
| Part | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Operating Temperature | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Technology | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Mounting Type | Package / Case | Power Dissipation (Max) [Max] | Rds On (Max) @ Id, Vgs [Max] | Supplier Device Package | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 90 A | 20 V | 175 °C | 4.5 V 10 V | 2.5 V | MOSFET (Metal Oxide) | 81 nC | 5400 pF | 60 V | Surface Mount | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 157 W | 3.3 mOhm | DPAK+ | N-Channel |