MOSFET N-CH 500V 3A DPAK
| Part | Supplier Device Package | Mounting Type | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Type | Drain to Source Voltage (Vdss) | Technology | Operating Temperature | Vgs (Max) | Package / Case | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | DPAK | Surface Mount | 3 Ohm | 60 W | 10 V | 280 pF | 3 A | 7 nC | N-Channel | 500 V | MOSFET (Metal Oxide) | 150 °C | 30 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 4.4 V |