20ETS12 Series

Catalog

DIODE GEN PURP 1.2KV 20A TO263AB

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If	Package / Case	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Speed	Speed	Mounting Type	Technology	Reverse Recovery Time (trr)
Vishay General Semiconductor - Diodes Division 20ETS12STRR	150 °C	-40 °C	1.1 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	100 µA	1.2 kV	TO-263AB (D2PAK)	Standard Recovery >500ns	200 mA	Surface Mount	Standard
Vishay General Semiconductor - Diodes Division VS-20ETS12STRL-M3	150 °C	-40 °C	1.1 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	100 µA	1.2 kV	TO-263AB (D2PAK)		200 mA 500 ns	Surface Mount	Standard
Vishay General Semiconductor - Diodes Division VS-20ETS12FP-M3	150 °C	-40 °C	1.3 V	TO-220-2 Full Pack	100 µA	1.2 kV	TO-220-2 Full Pack		200 mA 500 ns	Through Hole	Standard	95 ns
Vishay General Semiconductor - Diodes Division VS-20ETS12STRRPBF	150 °C	-40 °C	1.1 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	100 µA	1.2 kV	TO-263AB (D2PAK)	Standard Recovery >500ns	200 mA	Surface Mount	Standard
Vishay General Semiconductor - Diodes Division 20ETS12	150 °C	-40 °C	1.1 V	TO-220-2	100 µA	1.2 kV	TO-220AC	Standard Recovery >500ns	200 mA	Through Hole	Standard