DIODE GEN PURP 50V 3A DO214AB
| Part | Supplier Device Package | Technology | Package / Case | Current - Average Rectified (Io) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Voltage - DC Reverse (Vr) (Max) [Max] | Reverse Recovery Time (trr) | Speed | Voltage - Forward (Vf) (Max) @ If [Max] | Grade | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | DO-214AB (SMC) | Standard | DO-214AB SMC | 3 A | 10 µA | 45 pF | Surface Mount | 150 °C | -55 °C | 50 V | 35 ns | 200 mA 500 ns | |||
Taiwan Semiconductor Corporation | DO-214AB (SMC) | Standard | DO-214AB SMC | 3 A | 10 µA | 45 pF | Surface Mount | 150 °C | -55 °C | 50 V | 35 ns | 200 mA 500 ns | 950 mV | Automotive | AEC-Q101 |
Taiwan Semiconductor Corporation | DO-214AB (SMC) | Standard | DO-214AB SMC | 3 A | 10 µA | 45 pF | Surface Mount | 150 °C | -55 °C | 50 V | 35 ns | 200 mA 500 ns | 950 mV | ||
Taiwan Semiconductor Corporation | DO-214AB (SMC) | Standard | DO-214AB SMC | 3 A | 10 µA | 45 pF | Surface Mount | 150 °C | -55 °C | 50 V | 35 ns | 200 mA 500 ns | 950 mV | ||
Taiwan Semiconductor Corporation | DO-214AB (SMC) | Standard | DO-214AB SMC | 3 A | 10 µA | 45 pF | Surface Mount | 150 °C | -55 °C | 50 V | 35 ns | 200 mA 500 ns | 950 mV | Automotive | AEC-Q101 |