GD25LE32 Series

Manufacturer: GigaDevice Semiconductor (HK) Limited

Catalog

IC FLASH 32MBIT SPI/QUAD 8SOP

Part	Write Cycle Time - Word, Page [custom]	Write Cycle Time - Word, Page [custom]	Memory Type	Mounting Type	Memory Format	Technology	Access Time	Voltage - Supply [Max]	Voltage - Supply [Min]	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Memory Size	Memory Organization	Clock Frequency	Memory Interface	Package / Case [y]	Package / Case	Package / Case [x]	Write Cycle Time - Word, Page
GigaDevice Semiconductor (HK) Limited GD25LE32ESIGR	60 µs	2.4 ms	Non-Volatile	Surface Mount	FLASH	FLASH - NOR (SLC)	6 ns	2 V	1.65 V	8-SOP	85 °C	-40 °C	32 Gbit	4M x 8	133 MHz	QPI Quad I/O SPI	5.3 mm	8-SOIC	0.209 "
GigaDevice Semiconductor (HK) Limited GD25LE32ELIGR	60 µs	2.4 ms	Non-Volatile	Surface Mount	FLASH	FLASH - NOR (SLC)	6 ns	2 V	1.65 V	10-WLCSP	85 °C	-40 °C	32 Gbit	4M x 8	133 MHz	QPI Quad I/O SPI		10-XFBGA WLCSP
GigaDevice Semiconductor (HK) Limited GD25LE32ENIGR	60 µs	2.4 ms	Non-Volatile	Surface Mount	FLASH	FLASH - NOR (SLC)	6 ns	2 V	1.65 V	8-USON (3x4)	85 °C	-40 °C	32 Gbit	4M x 8	133 MHz	QPI Quad I/O SPI		8-UDFN Exposed Pad
GigaDevice Semiconductor (HK) Limited GD25LE32EEEGR	100 µs	4 ms	Non-Volatile	Surface Mount	FLASH	FLASH - NOR (SLC)	6 ns	2 V	1.65 V	8-USON (3x2)	125 °C	-40 °C	32 Gbit	4M x 8	133 MHz	QPI Quad I/O SPI		8-XFDFN Exposed Pad
GigaDevice Semiconductor (HK) Limited GD25LE32DLIGR			Non-Volatile	Surface Mount	FLASH	FLASH - NOR		2 V	1.65 V		85 °C	-40 °C	32 Gbit	4M x 8	120 MHz	SPI - Quad I/O		21-XFBGA WLSCP		2.4 ms
GigaDevice Semiconductor (HK) Limited GD25LE32EQIGR	60 µs	2.4 ms	Non-Volatile	Surface Mount	FLASH	FLASH - NOR (SLC)	6 ns	2 V	1.65 V	8-USON (4x4)	85 °C	-40 °C	32 Gbit	4M x 8	133 MHz	QPI Quad I/O SPI		8-XDFN Exposed Pad