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100V N-CHANNEL ENHANCEMENT MODE
| Part | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Technology | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [x] | Package / Case | Package / Case [y] | Package / Case [x] | Power Dissipation (Max) | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Vgs (Max) | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Panjit International Inc. | 100 V | 3.3 A | MOSFET (Metal Oxide) | 1413 pF | -55 °C | 150 °C | 115 mOhm | 8-SOP | 20 nC | 8-SOIC | 3.9 mm | 0.154 in | 2.5 W | Surface Mount | 4.5 V 10 V | 2.5 V | 20 V | N-Channel |