DIODE MODULE GP 1.4KV 3TOWER
| Part | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Package / Case | Voltage - DC Reverse (Vr) (Max) [Max] | Voltage - Forward (Vf) (Max) @ If | Technology | Current - Reverse Leakage @ Vr | Supplier Device Package | Mounting Type | Speed | Speed | Diode Configuration | Current - Average Rectified (Io) (per Diode) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 150 °C | -55 °C | 3-SMD Module | 1400 V | 1.2 V | Standard | 25 µA | Three Tower | Chassis Mount | Standard Recovery >500ns | 200 mA | 1 Pair Common Cathode | 600 A |