TIP101 Series

8.0 A, 100 V NPN Darlington Bipolar Power Transistor

Catalog

8.0 A, 100 V NPN Darlington Bipolar Power Transistor

Part	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Package / Case	Current - Collector (Ic) (Max) [Max]	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]
ON Semiconductor TIP101	1000 hFE	2 W	2.5 V	TO-220-3	8 A	Through Hole	80 V	50 µA	TO-220	150 °C	-65 °C

Catalog

8.0 A, 100 V NPN Darlington Bipolar Power Transistor

Key Features

• High DC Current Gain - hFE= 2500 (typ) @ IC= 4.0 mAdc

• Collector-Emitter Sustaining Voltage--@ 30 mAdcVCEO(sus)= 60 Vdc (Min)-TIP100, TIP105VCEO(sus)= 80 Vdc (Min)-TIP101, TIP106VCEO(sus)= 100 Vdc (Min)-TIP102, TIP107

• Low Collector-Emitter Saturation VoltageVCE(sat)= 2.0 Vdc (Max) @ IC= 3.0 AdcVCE(sat)= 2.5 Vdc (Max) @ IC= 8.0 Adc

• Monolithic Construction with Built-In Base-Emitter Shunt Resistors

• TO-220 AB Compact Package

• Pb-Free Packages are Available

Description

The Darlington Bipolar Power Transistor is designed for general-purpose amplifier and low speed switching applications. The TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP) are complementary devices.