IC DRAM 64MBIT PAR 66TSOP II
| Part | Mounting Type | Memory Type | Memory Format | Memory Interface | Operating Temperature [Max] | Operating Temperature [Min] | Memory Size | Package / Case [custom] | Package / Case | Package / Case [custom] | Supplier Device Package | Access Time | Clock Frequency | Memory Organization | Voltage - Supply [Max] | Voltage - Supply [Min] | Write Cycle Time - Word, Page |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Winbond Electronics | Surface Mount | Volatile | DRAM | Parallel | 85 °C | -40 °C | 64 Gbit | 0.4 in | 66-TSSOP | 0.4 in | 66-TSOP II | 55 ns | 200 MHz | 4M x 16 | 2.7 V | 2.3 V | 15 ns |
Winbond Electronics | Surface Mount | Volatile | DRAM | Parallel | 85 °C | -40 °C | 64 Gbit | 0.4 in | 66-TSSOP | 0.4 in | 66-TSOP II | 55 ns | 200 MHz | 4M x 16 | 2.7 V | 2.3 V | 15 ns |
Winbond Electronics | Surface Mount | Volatile | DRAM | Parallel | 70 °C | 0 °C | 64 Gbit | 0.4 in | 66-TSSOP | 0.4 in | 66-TSOP II | 55 ns | 200 MHz | 4M x 16 | 2.7 V | 2.3 V | 15 ns |
Winbond Electronics | Surface Mount | Volatile | DRAM | Parallel | 70 °C | 0 °C | 64 Gbit | 0.4 in | 66-TSSOP | 0.4 in | 66-TSOP II | 55 ns | 250 MHz | 4M x 16 | 2.7 V | 2.4 V | 15 ns |
Winbond Electronics | Surface Mount | Volatile | DRAM | Parallel | 85 °C | -40 °C | 64 Gbit | 0.4 in | 66-TSSOP | 0.4 in | 66-TSOP II | 55 ns | 200 MHz | 4M x 16 | 2.7 V | 2.3 V | 15 ns |
Winbond Electronics | Surface Mount | Volatile | DRAM | Parallel | 70 °C | 0 °C | 64 Gbit | 0.4 in | 66-TSSOP | 0.4 in | 66-TSOP II | 55 ns | 200 MHz | 4M x 16 | 2.7 V | 2.3 V | 15 ns |
Winbond Electronics | Surface Mount | Volatile | DRAM | Parallel | 70 °C | 0 °C | 64 Gbit | 0.4 in | 66-TSSOP | 0.4 in | 66-TSOP II | 55 ns | 250 MHz | 4M x 16 | 2.7 V | 2.4 V | 15 ns |
Winbond Electronics | Surface Mount | Volatile | DRAM | Parallel | 70 °C | 0 °C | 64 Gbit | 0.4 in | 66-TSSOP | 0.4 in | 66-TSOP II | 55 ns | 250 MHz | 4M x 16 | 2.7 V | 2.4 V | 15 ns |