MOSFET N-CH 650V 12A TO220-3F
| Part | Power Dissipation (Max) [Max] | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Type | Current - Continuous Drain (Id) @ 25°C | Package / Case | Rds On (Max) @ Id, Vgs [Max] | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Alpha & Omega Semiconductor Inc. | 50 W | Through Hole | 10 V | MOSFET (Metal Oxide) | -55 °C | 150 °C | 30 V | TO-220F | 48 nC | N-Channel | 12 A | TO-220-3 Full Pack | 720 mOhm | 650 V | 4.5 V | ||
Alpha & Omega Semiconductor Inc. | 50 W | Through Hole | 10 V | MOSFET (Metal Oxide) | -55 °C | 150 °C | 30 V | TO-220F | 50 nC | N-Channel | 12 A | TO-220-3 Full Pack | 600 V | 4.5 V | 2100 pF | 550 mOhm | |
Alpha & Omega Semiconductor Inc. | 50 W | Through Hole | 10 V | MOSFET (Metal Oxide) | -55 °C | 150 °C | 30 V | TO-220F | 50 nC | N-Channel | 12 A | TO-220-3 Full Pack | 600 V | 4.5 V | 2100 pF | 550 mOhm |