UCC21222-Q1 Series

Automotive 3.0kVrms, 4A/6A 2-channel isolated gate driver w/ disable, programmable deadtime, 8V UVLO

Catalog

Automotive 3.0kVrms, 4A/6A 2-channel isolated gate driver w/ disable, programmable deadtime, 8V UVLO

Part	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Package / Case	Package / Case [x]	Package / Case [y]	Channel Type	Operating Temperature [Max]	Operating Temperature [Min]	Logic Voltage - VIL, VIH [custom]	Logic Voltage - VIL, VIH [custom]	Gate Type	Grade	Driven Configuration	Qualification	Mounting Type	Supplier Device Package	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Input Type	Voltage - Supply [Max]	Voltage - Supply [Min]	Number of Drivers
Texas Instruments UCC21222QDRQ1	6 A	4 A	16-SOIC	0.154 in	3.9 mm	Independent	150 °C	-40 °C	1.6 V	1.25 V	IGBT N-Channel MOSFET	Automotive	Half-Bridge	AEC-Q100	Surface Mount	16-SOIC	5 ns	6 ns	CMOS/TTL	5.5 V	3 V	2
Texas Instruments UCC21222D	6 A	4 A	16-SOIC	0.154 in	3.9 mm	Independent	125 °C	-40 °C	1.6 V	1.25 V	IGBT N-Channel MOSFET		Half-Bridge		Surface Mount	16-SOIC	5 ns	6 ns	CMOS/TTL	5.5 V	3 V	2
Texas Instruments UCC21222QDQ1	6 A	4 A	16-SOIC	0.154 in	3.9 mm	Independent	150 °C	-40 °C	1.6 V	1.25 V	IGBT N-Channel MOSFET	Automotive	Half-Bridge	AEC-Q100	Surface Mount	16-SOIC	5 ns	6 ns	CMOS/TTL	5.5 V	3 V	2
Texas Instruments UCC21222DR	6 A	4 A	16-SOIC	0.154 in	3.9 mm	Independent	125 °C	-40 °C	1.6 V	1.25 V	IGBT N-Channel MOSFET		Half-Bridge		Surface Mount	16-SOIC	5 ns	6 ns	CMOS/TTL	5.5 V	3 V	2

Catalog

Automotive 3.0kVrms, 4A/6A 2-channel isolated gate driver w/ disable, programmable deadtime, 8V UVLO

Key Features

• Universal: dual low-side, dual high-side or half-bridge driverAEC Q100 qualified with:Device temperature grade 1Device HBM ESD classification level H2Device CDM ESD classification level C4BJunction temperature range –40°C to 150°C4A peak source, 6A peak sink outputCommon-mode transient immunity (CMTI) greater than 125V/nsUp to 25V VDD output drive supply8V VDD UVLOSwitching parameters:33ns typical propagation delay5ns maximum pulse-width distortion10µs maximum VDD power-up delayUVLO protection for all power suppliesFast disable for power sequencingUniversal: dual low-side, dual high-side or half-bridge driverAEC Q100 qualified with:Device temperature grade 1Device HBM ESD classification level H2Device CDM ESD classification level C4BJunction temperature range –40°C to 150°C4A peak source, 6A peak sink outputCommon-mode transient immunity (CMTI) greater than 125V/nsUp to 25V VDD output drive supply8V VDD UVLOSwitching parameters:33ns typical propagation delay5ns maximum pulse-width distortion10µs maximum VDD power-up delayUVLO protection for all power suppliesFast disable for power sequencing

Description

The UCC21222-Q1 device is an isolated dual channel gate driver with programmable dead time and a wide temperature range. This device exhibits consistent performance and robustness under extreme temperature conditions. It is designed with 4A peak-source and 6A peak-sink current to drive power MOSFET, IGBT, and GaN transistors. The UCC21222-Q1 device can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver. A 5ns delay matching performance allows two outputs to be paralleled, doubling the drive strength for heavy load conditions without risk of internal shoot-through. The input side is isolated from the two output drivers by a 3.0kVRMS isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI). Resistor programmable dead time gives the capability to adjust dead time for system constraints to improve efficiency and prevent output overlap. Other protection features include a disable feature to shut down both outputs simultaneously when DIS is set high, an integrated deglitch filter that rejects input transients shorter than 5ns, and negative voltage handling for up to –2V spikes for 200ns on input and output pins. All supplies have UVLO protection. The UCC21222-Q1 device is an isolated dual channel gate driver with programmable dead time and a wide temperature range. This device exhibits consistent performance and robustness under extreme temperature conditions. It is designed with 4A peak-source and 6A peak-sink current to drive power MOSFET, IGBT, and GaN transistors. The UCC21222-Q1 device can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver. A 5ns delay matching performance allows two outputs to be paralleled, doubling the drive strength for heavy load conditions without risk of internal shoot-through. The input side is isolated from the two output drivers by a 3.0kVRMS isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI). Resistor programmable dead time gives the capability to adjust dead time for system constraints to improve efficiency and prevent output overlap. Other protection features include a disable feature to shut down both outputs simultaneously when DIS is set high, an integrated deglitch filter that rejects input transients shorter than 5ns, and negative voltage handling for up to –2V spikes for 200ns on input and output pins. All supplies have UVLO protection.