UCC5870-Q1 Series

Automotive, 3.75kVrms 30A single-channel functional safety isolated gate driver for IGBT/SiC

Catalog

Automotive, 3.75kVrms 30A single-channel functional safety isolated gate driver for IGBT/SiC

Part	Utilized IC / Part	Type	Supplied Contents	Operating Temperature [Min]	Operating Temperature [Max]	Number of Drivers	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Qualification	Driven Configuration	Mounting Type	Package / Case	Package / Case [x]	Package / Case [y]	Supplier Device Package	Voltage - Supply [Max]	Voltage - Supply [Min]	Channel Type	Logic Voltage - VIL, VIH	Grade	Input Type	Current - Peak Output (Source, Sink)
Texas Instruments UCC5870QDWJEVM-026	UCC5870	Power Management	Board(s)
Texas Instruments UCC5870QDWJRQ1				-40 °C	125 °C	1	150 ns	150 ns	AEC-Q100	Low-Side	Surface Mount	36-BSSOP	0.295 in	7.5 mm	36-SSOP	5.5 V 30 VDC	3 V 15 VDC	Single	1.5 V 3 V	Automotive	Inverting	15 A 15 A

Catalog

Automotive, 3.75kVrms 30A single-channel functional safety isolated gate driver for IGBT/SiC

Key Features

• Split output driver provides 30-A peak source and 30-A peak sink currentsAdjustable "on the fly" gate drive strengthInterlock and shoot-through protection with 150-ns(max) propagation delay and programmable minimum pulse rejectionPrimary and Secondary side active short circuit (ASC) supportConfigurable power transistor protectionsDESAT based short circuit protectionShunt resistor based overcurrent and short circuit protectionNTC based overtemperature protectionProgrammable soft turnoff (STO) and two-level turnoff (2LTOFF) during power transistor faultsFunctional Safety-CompliantDeveloped for functional safety applicationsDocumentation available to aid ISO 26262 system design up to ASIL DIntegrated diagnostics:Built-in self test (BIST) for protection comparatorsIN+ to transistor gate path integrityPower transistor threshold monitoringInternal clock monitoringFault alarm (nFLT1) and warning (nFLT2) outputsIntegrated 4-A active Miller clamp or optional external drive for Miller clamp transistorAdvanced high voltage clamping controlInternal and external supply undervoltage and overvoltage protectionActive output pulldown and default low outputs with low supply or floating inputsDriver die temperature sensing and overtemperature protection100-kV/µs minimum common mode transient immunity (CMTI) at VCM= 1000VSPI based device reconfiguration, verification, supervision, and diagnosisIntegrated 10-bit ADC for power transistor temperature, voltage, and current monitoringSafety-related certifications:3750– VRMSisolation for 1 minute per UL1577 (planned)AEC-Q100 qualified with the following results:Device temperature grade 0: –40°C to 125°C ambient operating temperatureDevice HBM ESD classification level 2Device CDM ESD classification level C4bSplit output driver provides 30-A peak source and 30-A peak sink currentsAdjustable "on the fly" gate drive strengthInterlock and shoot-through protection with 150-ns(max) propagation delay and programmable minimum pulse rejectionPrimary and Secondary side active short circuit (ASC) supportConfigurable power transistor protectionsDESAT based short circuit protectionShunt resistor based overcurrent and short circuit protectionNTC based overtemperature protectionProgrammable soft turnoff (STO) and two-level turnoff (2LTOFF) during power transistor faultsFunctional Safety-CompliantDeveloped for functional safety applicationsDocumentation available to aid ISO 26262 system design up to ASIL DIntegrated diagnostics:Built-in self test (BIST) for protection comparatorsIN+ to transistor gate path integrityPower transistor threshold monitoringInternal clock monitoringFault alarm (nFLT1) and warning (nFLT2) outputsIntegrated 4-A active Miller clamp or optional external drive for Miller clamp transistorAdvanced high voltage clamping controlInternal and external supply undervoltage and overvoltage protectionActive output pulldown and default low outputs with low supply or floating inputsDriver die temperature sensing and overtemperature protection100-kV/µs minimum common mode transient immunity (CMTI) at VCM= 1000VSPI based device reconfiguration, verification, supervision, and diagnosisIntegrated 10-bit ADC for power transistor temperature, voltage, and current monitoringSafety-related certifications:3750– VRMSisolation for 1 minute per UL1577 (planned)AEC-Q100 qualified with the following results:Device temperature grade 0: –40°C to 125°C ambient operating temperatureDevice HBM ESD classification level 2Device CDM ESD classification level C4b

Description

The UCC5870-Q1 device is an isolated, highly configurable single-channel gate driver targeted to drive high power SiC MOSFETs and IGBTs in EV/HEV applications. Power transistor protections, such as shunt-resistor–based overcurrent, NTC-based overtemperature, and DESAT detection, include selectable soft turn-off or two-level turn-off during these faults. To further reduce the application size, the UCC5870-Q1 integrates a 4-A active Miller clamp during switching, and an active gate pulldown while the driver is unpowered. An integrated 10-bit ADC enables monitoring of up to six analog inputs and the gate driver temperature for enhanced system management. Diagnostics and detection functions are integrated to simplify the design of ASIL-D compliant systems. The parameters and thresholds for these features are configurable using the SPI interface, which allows the device to be used with nearly any SiC MOSFET or IGBT. The UCC5870-Q1 device is an isolated, highly configurable single-channel gate driver targeted to drive high power SiC MOSFETs and IGBTs in EV/HEV applications. Power transistor protections, such as shunt-resistor–based overcurrent, NTC-based overtemperature, and DESAT detection, include selectable soft turn-off or two-level turn-off during these faults. To further reduce the application size, the UCC5870-Q1 integrates a 4-A active Miller clamp during switching, and an active gate pulldown while the driver is unpowered. An integrated 10-bit ADC enables monitoring of up to six analog inputs and the gate driver temperature for enhanced system management. Diagnostics and detection functions are integrated to simplify the design of ASIL-D compliant systems. The parameters and thresholds for these features are configurable using the SPI interface, which allows the device to be used with nearly any SiC MOSFET or IGBT.